We present a universal surface kinetic model developed with a self-consistent numerical algorithm under a wide range of oxide etching process conditions. The deposition or etch yield can be calculated by considering both the passivation layer and mixed layers simultaneously. The proposed model was verified with experimental and atomic scale simulations. Finally, we integrated this model with 3D feature profile simulation to investigate the emerging issues in the plasma oxide process, such as low temperature and surface charging. The valuable knowledge from our integrated simulation will be discussed for the next-generation plasma oxide etch process.
The next-generation semiconductor fabrication process requires advanced plasma etch technology to find breakthroughs in bottleneck steps such as high-aspect-ratio etch. Due to the inherent complexities, the industrial fields are eager for predictable plasma process simulation, which can help the trial-and-error approach. Due to the above reasons, empirical technologies in semiconductor plasma processing have been responsible mainly for the fabrication of most semiconductor devices. As the semiconductor industries move on the 3D chip technologies, these approaches are confronted by severe limitations due to the absence of fast and cost-effective nanoscale simulation tools. Here, we present a realistic 3D feature profile simulation coupled with bulk plasma simulation, which can support the insight for the next-generation plasma process.
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