Moiré photonic crystals can provide flat, dispersion-free bands that localize light with high Q-factors and low mode volumes, presenting opportunities to address nanoscale emitters with great specificity for applications in low-threshold nano-lasers. We report on the realization of moiré photonic crystal lasers in Gallium Nitride (GaN). We demonstrate fabrication of suspended moiré photonic crystals in GaN with embedded indium gallium nitride quantum wells and quantum dots, which emit in the violet-blue regime. We characterize moiré lattices of varying sizes, and photoluminescent spectra reveal evidence of moiré-induced flat-band modes, indicating a path toward a new kind of highly efficient, GaN-based nano-laser.
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