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In this paper we discuss how a combination of band structure and band alignment engineering may be used to reduce the temperature sensitivity of semiconductor lasers operating in the near-IR. The use of back-to-back type-II band alignment “W”-structures, already successfully demonstrated in the mid-IR, provides a route to engineer the temperature sensitivity of the emission wavelength in near-IR devices through control of the band gap and band bending. Furthermore, utilising novel alloys such as the bismide-nitrides also provides a route to reduce non-radiative processes which underpin the temperature sensitivity of the threshold current across this wavelength range.
Dominic A. Duffy,Igor P. Marko, andStephen J. Sweeney
"Novel III-V materials and heterostructures for thermally stable near-IR lasers", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300G (17 March 2023); https://doi.org/10.1117/12.2649895
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Dominic A. Duffy, Igor P. Marko, Stephen J. Sweeney, "Novel III-V materials and heterostructures for thermally stable near-IR lasers," Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC124300G (17 March 2023); https://doi.org/10.1117/12.2649895