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In this talk, I will discuss about the recent progress made on the development of continuous-wave operating electrically-pumped InP-based topological insulator lasers at 1.55 µm. Two-dimensional (2D) arrays of ring resonators are employed for implementing such diode lasers which are expected to inherently harness the features of topologically-protected transport to force many semiconductor emitters to phase-lock together and behave as a single powerful highly-coherent laser source. Results related to degree of disorder obtained from conventional microfabrication technologies and its impact on topological lasing will be presented. The influence of dry etching and the associated surface recombination on deeply etched ring structures will also be discussed.
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