Optoelectronic learning in halide perovskite thin film transistors

Amoolya Nirmal; Darrell Jun Jie Tay; Natalia Yantara; Timothy Ng Si En; Divyam Sharma; Nripan Mathews

doi:10.1117/12.2677979

29 September 2023 Optoelectronic learning in halide perovskite thin film transistors

Amoolya Nirmal, Darrell Jun Jie Tay, Natalia Yantara, Timothy Ng Si En, Divyam Sharma, Nripan Mathews

Proceedings Volume PC12662, Organic and Hybrid Transistors XXII; PC126620E (2023) https://doi.org/10.1117/12.2677979
Event: SPIE Organic Photonics + Electronics, 2023, San Diego, California, United States

Abstract

Metal halide perovskites are promising alternatives to organic semiconductors and metal oxides for printed electronic applications. Their facile processability allows them to be fabricated through a wide variety of techniques. However there are multiple challenges that halide perovskite transistors need to manage before they are strong contenders. The primary problem associated with halide perovskites are the ionic migration effects which limit room temperature operation. TFT operation at room temperature is primarily achieved via precise compositional, microstructural control or via surface/substrate/electrode treatments. Here, tin doped indium oxide is utilized as source/drain contacts to fabricate a room temperature operational n-type solution-processed Cs(MAFA)Pb(BrI) transistor. Moreover we demonstrate optical learning in these TFTs by exploiting the photoactive nature and gate bias effects of this transistor.

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Citation Download Citation

Amoolya Nirmal, Darrell Jun Jie Tay, Natalia Yantara, Timothy Ng Si En, Divyam Sharma, and Nripan Mathews "Optoelectronic learning in halide perovskite thin film transistors", Proc. SPIE PC12662, Organic and Hybrid Transistors XXII, PC126620E (29 September 2023); https://doi.org/10.1117/12.2677979

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KEYWORDS

Perovskite

Transistors

Optoelectronics

Thin films

Indium oxide

Metal oxides

Metals

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