Irresistible Materials (IM) is improving its Multi-Trigger Resist – a negative tone, high opacity molecular resist specifically designed for high speed EUV, and high-NA EUV lithography, capable of patterning well with thin films. Pitch 28nm dense patterns can be patterned at a dose of 32mJ/cm2, a line width of 12.0nm, and a biased LWR of 3.9nm. This resist formulation has also been used to pattern pillars at pitches of 34nm hexagonal with a dose of 42mJ/cm2 to achieve 17nm diameter pillars. P32 pillars have also been patterned with a dose of 76 mJ/cm2 and biased LCDU of 3.4nm.
|