Magnetic sensing with silicon vacancies in isotopically purified 4H-SiC

Ignas Lekavicius; Samuel Carter; Rachael Myers-Ward; Samuel White; Daniel Pennachio; Jenifer Hajzus; D. Kurt Gaskill; Andrew Purdy; Andrew Yeats; Peter Brereton; Thomas Reinecke; Evan Glaser

doi:10.1117/12.3001818

9 March 2024 Magnetic sensing with silicon vacancies in isotopically purified 4H-SiC

Ignas Lekavicius, Samuel Carter, Rachael Myers-Ward, Samuel White, Daniel Pennachio, Jenifer Hajzus, D. Kurt Gaskill, Andrew Purdy, Andrew Yeats, Peter Brereton, Thomas Reinecke, Evan Glaser

Author Affiliations +

Proceedings Volume PC12895, Quantum Sensing and Nano Electronics and Photonics XX; PC128950Q (2024) https://doi.org/10.1117/12.3001818
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

The silicon vacancy center in 4H-SiC is an optically active defect with spin transitions that can be initialized and read out at room temperature. The sensitivities of room temperature magnetometers using these defects have been limited by decoherence due to a magnetically noisy host crystal. In this work we demonstrate coherence time improvements of silicon vacancy ensembles via isotopic purification of SiC and through a novel choice of basis in the S=3/2 ground state of the defect. Using this, we realize a broadband room temperature magnetometer with a 4nT/rt(hz) sensitivity and a 200pT/rt(Hz) shot noise limited sensitivity.

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Citation Download Citation

Ignas Lekavicius, Samuel Carter, Rachael Myers-Ward, Samuel White, Daniel Pennachio, Jenifer Hajzus, D. Kurt Gaskill, Andrew Purdy, Andrew Yeats, Peter Brereton, Thomas Reinecke, and Evan Glaser "Magnetic sensing with silicon vacancies in isotopically purified 4H-SiC", Proc. SPIE PC12895, Quantum Sensing and Nano Electronics and Photonics XX, PC128950Q (9 March 2024); https://doi.org/10.1117/12.3001818

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