Photomasks For Micron Geometry Transistors

Herb G. Hasemann

doi:10.1117/12.954850

20 September 1976 Photomasks For Micron Geometry Transistors

Herb G. Hasemann

Proceedings Volume 0080, Developments in Semiconductor Microlithography; (1976) https://doi.org/10.1117/12.954850
Event: Developments in Semiconductor Microlithography, 1976, San Jose, CA, United States

Abstract

Photomasks used to produce high frequency microwave transistors have unique and different requirements than do integrated circuit photomasks. Critical dimensions have a tolerance of ± 0.2 micrometers. In most cases the critical geometry is 1.0 micrometer or less. Defect densities are very lenient as compared to integrated circuits. We inspect to a 4.0 A.Q.L. In a two-inch square array we have on the order of 8,000 to 15,000 discrete device patterns. Inspection is made on a random sample as shown on the following table.

Citation Download Citation

Herb G. Hasemann "Photomasks For Micron Geometry Transistors", Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); https://doi.org/10.1117/12.954850

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