Slider Liquid-Phase Epitaxy (LPE) Of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te

J. L. Schmit; R. J. Hager; R. A. Wood

doi:10.1117/12.965797

11 June 1981 Slider Liquid-Phase Epitaxy (LPE) Of Hg_1-xCd_xTe

J. L. Schmit, R. J. Hager, R. A. Wood

Proceedings Volume 0285, Infrared Detector Materials; (1981) https://doi.org/10.1117/12.965797
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

We describe the Liquid Phase Epitaxial (LPE) growth of p-Hgl-xCdxTe on CdTe substrates up to 2cm x 3cm in area, using an atomospheric pressure slider with a tellurium-rich growth liquid. Controlled growth of Hgl-x CdxTe with x values of 0.2, 0.3, and 0.4 will be described, and measurements presented on the morphology and semiconductor characteristics of the grown layers.

Citation Download Citation

J. L. Schmit, R. J. Hager, and R. A. Wood "Slider Liquid-Phase Epitaxy (LPE) Of Hg_1-xCd_xTe", Proc. SPIE 0285, Infrared Detector Materials, (11 June 1981); https://doi.org/10.1117/12.965797

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