Tunneling In The Reverse Dark Current Characteristic Of Be-Implanted GaAlAsSb Avalanche Photodetectors

R. Chin; C. A. Hill; N. Tabatabaie; G. E. Stillman

doi:10.1117/12.933234

27 August 1982 Tunneling In The Reverse Dark Current Characteristic Of Be-Implanted GaAlAsSb Avalanche Photodetectors

R. Chin, C. A. Hill, N. Tabatabaie, G. E. Stillman

Proceedings Volume 0321, Integrated Optics II; (1982) https://doi.org/10.1117/12.933234
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Tunneling current has been identified in the reverse I-V characteristics of Be-implanted Ga_0.₈A1_0.₂As_ySb₁_-y avalanche photodiodes. The tunneling energy is considerably less than the bandgap energy. This identifies the tunneling mechanism as defect assisted tunneling rather than a band-to-band process. It is also shown with the proper structure that the defect assisted tunneling can virtually be eliminated, resulting in extremely low dark current GaAlAsSb photodiodes.

Citation Download Citation

R. Chin, C. A. Hill, N. Tabatabaie, and G. E. Stillman "Tunneling In The Reverse Dark Current Characteristic Of Be-Implanted GaAlAsSb Avalanche Photodetectors", Proc. SPIE 0321, Integrated Optics II, (27 August 1982); https://doi.org/10.1117/12.933234

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