Paper
15 September 1982 Laser Spectroscopic Monitoring Of A Hydride Transport Vapor Phase Epitaxy (VPE) Reactor
R. F. Karlicek, V. M. Donnelly, W. D. Johnston Jr.
Author Affiliations +
Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934277
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Laser spectroscopy techniques have been demonstrated for monitoring of gas-phase reactants in a system designed to simulate a hydride transport vapor phase epitaxy (VPE) reactor used to grow InxGa1-xAsyP1-y. Using a single excitation wavelength, unique emissions characteristic of InCl,GaC1, P2, As2, As4, PH3, and AsH3 can be resolved under typical VPE conditions (700°-800°C, 1 atm total pressure) making this technique ideally suited for nonintrusive, real-time, simultaneous monitoring of these species during growth. Detection limits range from 10-5 to 10-8 atm, well below species concentrations typically expected under growth conditions (10-3 -10-4 atm). The details of this technique and some examples of its use in determining VPE growth conditions are presented.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. F. Karlicek, V. M. Donnelly, and W. D. Johnston Jr. "Laser Spectroscopic Monitoring Of A Hydride Transport Vapor Phase Epitaxy (VPE) Reactor", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934277
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KEYWORDS
Arsenic

Laser induced fluorescence

Laser spectroscopy

Excimer lasers

Gallium

Vapor phase epitaxy

Indium

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