Effect Of Ion Implantation On The Reflectivity Of Silica

Russell R. Jensen; Ram Kossowsky

doi:10.1117/12.933794

15 September 1982 Effect Of Ion Implantation On The Reflectivity Of Silica

Russell R. Jensen, Ram Kossowsky

Proceedings Volume 0346, Thin Film Technologies and Special Applications; (1982) https://doi.org/10.1117/12.933794
Event: 1982 Technical Symposium East, 1982, Arlington, United States

Abstract

The feasibility of creating anti-reflective silica by ion implanting buried, high refractive index layers below the surface of the glass has been investigated. The implantation of Al and Ti appears to increase significantly the index of the buried layers, although not enough to allow anti-reflective glass to be fabricated; excessive absorption in the layers was also encountered. Additional processing steps are suggested which may overcome these problems.

Citation Download Citation

Russell R. Jensen and Ram Kossowsky "Effect Of Ion Implantation On The Reflectivity Of Silica", Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); https://doi.org/10.1117/12.933794

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