InSb Infrared Arrays With Si - CCD Readout

Bernard Munier; Marc Arques; Jacques Portmann; Jean-Philippe Reboul

doi:10.1117/12.935182

30 November 1983 InSb Infrared Arrays With Si - CCD Readout

Bernard Munier, Marc Arques, Jacques Portmann, Jean-Philippe Reboul

Proceedings Volume 0395, Advanced Infrared Sensor Technology; (1983) https://doi.org/10.1117/12.935182
Event: 1983 International Technical Conference/Europe, 1983, Geneva, Switzerland

Abstract

We present in this paper the performance of a linear array of 30 InSb 3-5 μm detectors multiplexed by a silicon CCD. The InSb detectors are photodiodes built on a p type InSb bulk substrate. The detector technololgy has been specially adapted for multiplexing detectors by n channel CCD's. The InSb detectors have a near-BLIP performance, are highly uniform and do not show any 1/f noise when reverse biased. The InSb array has been multiplexed in the focal plane by a n - channel CCD. The mean detectivity measured at the CCD output is 1.6 x 1011 cm W-1 Hz1/2. The photoresponse nonuniformity is smaller than ± 5 % and the dynamic range is 75 dB. The limiting factors of these kinds of arrays will be discussed.

Citation Download Citation

Bernard Munier, Marc Arques, Jacques Portmann, and Jean-Philippe Reboul "InSb Infrared Arrays With Si - CCD Readout", Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); https://doi.org/10.1117/12.935182

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