The Surface Electronic Structure Of Gaas(100) And GaAs(111) From Angle Resolved Photoemission

R D Bringans; R Z Bachrach

doi:10.1117/12.939180

27 March 1984 The Surface Electronic Structure Of Gaas(100) And GaAs(111) From Angle Resolved Photoemission

R D Bringans, R Z Bachrach

Proceedings Volume 0447, Science with Soft X-Rays; (1984) https://doi.org/10.1117/12.939180
Event: 1983 Brookhaven Conference: Science with Soft X-Rays, 1983, Upton, United States

Abstract

Angle resolved photoemission spectra have been measured for the polar (III) and (100) surfaces of GaAs. Strong differences exist in both cases between Ga-rich and As-rich surfaces in the energy region near the valence band maximum. Comparison of the spectra for the As-rich GaAs(111) (2x2) surface with a calculation of the location expected for bulk-derived features shows that the bulk bands appear to be folded back into the (2x2) surface Brillouin zone. No such effect is seen for the GaAs(100) c(4x4) surface.

Citation Download Citation

R D Bringans and R Z Bachrach "The Surface Electronic Structure Of Gaas(100) And GaAs(111) From Angle Resolved Photoemission", Proc. SPIE 0447, Science with Soft X-Rays, (27 March 1984); https://doi.org/10.1117/12.939180

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