Amorphous Silicon As An Inorganic Resist

P H La Marche; R. Levi-Setti

doi:10.1117/12.942323

18 June 1984 Amorphous Silicon As An Inorganic Resist

P H La Marche, R. Levi-Setti

Author Affiliations +

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942323
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Negative tone images have been produced directly in glow discharge deposited amorphous silicon hydride by selective gallium-ion implantation. Like crystalline silicon, amorphous silicon exhibits a greatly reduced etch rate in aqueous caustic solutions when implanted with doses in excess of about 1013 Ga ions/cm2. The amorphous silicon behaves as a negative resist with a threshold sensitivity of about 1 pC/cm2. This material is particularly attractive as a possible masking material for ultra-violet light due to its high absorption properties in this wavelength region, low relative cost and the ease by which it can be deposited on a wide range of materials.

Citation Download Citation

P H La Marche and R. Levi-Setti "Amorphous Silicon As An Inorganic Resist", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942323

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