EELS And XPS Investigation On Amorphous Silicon Carbide Alloy Film

Zhang Fang-qing; Chen Guang-hua; Xu Xi-xiang

doi:10.1117/12.946327

28 June 1985 EELS And XPS Investigation On Amorphous Silicon Carbide Alloy Film

Zhang Fang-qing, Chen Guang-hua, Xu Xi-xiang

Proceedings Volume 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II; (1985) https://doi.org/10.1117/12.946327
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The EELS and XPS measurements are used to analyze the amorphous silicon-carbon-hydrogen alloy films deposited by r.f. reactive sputtering method (RS a-SixCl_x:H). Based on the results of EELS and XPS, considering other optical and electrical measurements, that the structural change occured at 1-x (carbon content)=0.4 in the alloy film was further verified.

Citation Download Citation

Zhang Fang-qing, Chen Guang-hua, and Xu Xi-xiang "EELS And XPS Investigation On Amorphous Silicon Carbide Alloy Film", Proc. SPIE 0524, Spectroscopic Characterization Techniques for Semiconductor Technology II, (28 June 1985); https://doi.org/10.1117/12.946327

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