The Potential Of Optical Lithography

Makoto Nakase

doi:10.1117/12.947497

20 June 1985 The Potential Of Optical Lithography

Makoto Nakase

Proceedings Volume 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV; (1985) https://doi.org/10.1117/12.947497
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

The limits of submicron patterning by optical lithography were estimated by computer simulation. As a result, the optimum numerical aperture, NA, which gives the highest resolution was determined. Assuming that the permitted defocus value is +1 pm, the lithographic resolution of about 0.7 pm was obtained with NA 0.5 and near-UV exposure. A 0.5-μm resolution was obtained with NA:0.35 and deep-UV exposure. In addition, less than 0.5-μm resolution was suggested using resist system technologies and optical exposure tools that optimize NA as well as the exposure wavelength. Furthermore, it is shown that the goal of half micron resolution will be industrially achieved before the end of 1980's by optical lithography rather than by electron-beam lithography.

Citation Download Citation

Makoto Nakase "The Potential Of Optical Lithography", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); https://doi.org/10.1117/12.947497

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