Surface Topography Studies Of Nanocrystalline Si by STM

D. W. Pohl; J. K. Gimzewski; A. Humbert; S. Vepek

doi:10.1117/12.949738

2 January 1986 Surface Topography Studies Of Nanocrystalline Si by STM

D. W. Pohl, J. K. Gimzewski, A. Humbert, S. Vepek

Proceedings Volume 0565, Micron and Submicron Integrated Circuit Metrology; (1986) https://doi.org/10.1117/12.949738
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

Scanning tunneling microscopy (STM) is optimally suited to study surface topography and roughness at the nanometer scale where optical and other methods fail. The topography of nanocrystalline silicon is chosen as an example to demonstrate the outstanding potential of the new technique.

Citation Download Citation

D. W. Pohl, J. K. Gimzewski, A. Humbert, and S. Vepek "Surface Topography Studies Of Nanocrystalline Si by STM", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949738

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