Gallium Arsenide Waveguide Interferometers And Couplers For High-Speed Electro-Optic Modulation And Switching

P. Buchmann; H. Kaufmann; H. Melchior; G. Guekos

doi:10.1117/12.951207

9 July 1986 Gallium Arsenide Waveguide Interferometers And Couplers For High-Speed Electro-Optic Modulation And Switching

P. Buchmann, H. Kaufmann, H. Melchior, G. Guekos

Author Affiliations +

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951207
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The properties of electro-optic waveguide devices in GaAs, such as propagation and coupling loss, reflections, driving requirements, bandwidth, polarization sensitivity and on/off ratio, have to be optimized to allow their application as high-speed modulators in single-mode optical communication links. By using electron beam masks, lift-off and reactive ion etching techniques for the fabrication of rib waveguides in n-/n+ GaAs we have achieved device losses of less than 5 dB for both Mach-Zehnder interferometers and stepped A directional couplers. Reflections from the coupling facets were reduced to less than .5% by SiO antireflection coatings. The driving voltages are between 10 V and 30 V and the modulation/ switching bandwidths exceed 5 GHz. Results of system applications at data rates of more than 500 Mbit/s are reported.

Citation Download Citation

P. Buchmann, H. Kaufmann, H. Melchior, and G. Guekos "Gallium Arsenide Waveguide Interferometers And Couplers For High-Speed Electro-Optic Modulation And Switching", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951207

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