Recent Developments In Sapphire Growth By Heat Exchanger Method (HEM)

C. P. Khattak; A. N. Scoville; F. Schmid

doi:10.1117/12.936413

19 December 1986 Recent Developments In Sapphire Growth By Heat Exchanger Method (HEM)

C. P. Khattak, A. N. Scoville, F. Schmid

Proceedings Volume 0683, Infrared and Optical Transmitting Materials; (1986) https://doi.org/10.1117/12.936413
Event: 30th Annual Technical Symposium, 1986, San Diego, United States

Abstract

Large diameter, sapphire crystals are grown using the heat exchanger method (HEM). In order to address current applications of sapphire 30 kg, 25 cm diameter boules have been put into production. The feasibility of growth of (0001) orientation boules has been demonstrated. This allows for larger sapphire components for zero birefringence optics applications. The HEM has been adapted as an "investment casting" technique for growing complicated sapphire components directly from the melt.

Citation Download Citation

C. P. Khattak, A. N. Scoville, and F. Schmid "Recent Developments In Sapphire Growth By Heat Exchanger Method (HEM)", Proc. SPIE 0683, Infrared and Optical Transmitting Materials, (19 December 1986); https://doi.org/10.1117/12.936413

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