Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-Gaas

H. Shen; P. Parayanthal; Fred H. Pollak; R. N. Sacks; G. Hickman

doi:10.1117/12.940913

22 April 1987 Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-GaAs

H. Shen, P. Parayanthal, Fred H. Pollak, R. N. Sacks, G. Hickman

Author Affiliations +

Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940913
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We have investigated symmetry forbidden longitudinal optic Raman scattering for various polarization configurations at 4579A from the <100> surface of heavily doped n-GaAs caused by the strong surface-fields and high impurity levels. We have evaluated the magnitude and phase of the coefficient of the electric-field induced term as well as the magnitude of the coefficient of the impurity-induced factor. The former parameter may be very useful for the contactless evaluation of space charge electric fields in GaAs.

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H. Shen, P. Parayanthal, Fred H. Pollak, R. N. Sacks, and G. Hickman "Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-GaAs", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940913

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