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Neural network models that mimic some functions of a brain use logic elements as neurons and connections of varying strength as synapses. Inspired by these models, we have developed a high density, programmable read only memory (PROM) that promises high-speed and fault tolerant capabilities. This memory is based on an innovative thin film implementation of binary synapses represented by a connection matrix with electronic amplifiers as input drivers and output sensors. A binary word is stored along a row of such a connection matrix of mutually perpendicular wires where the passive, two terminal, write-once synaptic interconnects consisting of a-Si:H microswitches are programmed to take on a value of '0' (synapse OFF) or a '1' (synapse ON). The retrieval of information is done either by addressing the matrix row-by-row or by content addressing in an associative recall. Thin film fabrication technology for this memory and the design options leading to very high density (up to a gigabit/cm2) PROM are described. Test circuits containing 40 x 40 binary synaptic arrays have been fabricated to study the a-Si:H memory switching properties for the 'write' operation. Results of the read operation and projections for larger memory blocks are discussed to highlight the potential for a read data rate exceeding 10 megabits/sec.
Taher Daud,Alex Moopenn,James Lamb,Anil Thakoor, andSatish Khanna
"Feedforward, High Density, Programmable Read Only Neural Network Based Memory System", Proc. SPIE 0880, High Speed Computing, (20 April 1988); https://doi.org/10.1117/12.944039
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Taher Daud, Alex Moopenn, James Lamb, Anil Thakoor, Satish Khanna, "Feedforward, High Density, Programmable Read Only Neural Network Based Memory System," Proc. SPIE 0880, High Speed Computing, (20 April 1988); https://doi.org/10.1117/12.944039