Paper
6 December 1988 LiNbO3 High Speed Travelling Wave Electro-Optic Waveguide Devices
A. R. Beaumont, K. R. Preston, B. M. Macdonald, R. N. Shaw, R. A. Harmon, C. W. Ford, A. P. Thomas, R. P. Merrett, R. C. Booth
Author Affiliations +
Proceedings Volume 0993, Integrated Optical Circuit Engineering VI; (1988) https://doi.org/10.1117/12.960076
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States
Abstract
The fabrication of LiNbO3 travelling wave electrodes is described. It is shown that devices with plasma etched Al electrodes can perform as well as devices employing the more conventional electro-plated Au technology and that bandwidths in excess of 12 GHz can readily be achieved. The reliability of travelling wave devices with plasma etched Al electrodes is considered and it is shown that metallisation lifetimes in excess of 16 years are currently predicted. The problems of using LiNb03 travelling wave devices in practical optical fibre systems are reviewed and it is shown that the use of a dedicated high speed drive amplifier can result in considerable simplification. The design and fabrication of such an amplifier based on GaAs technology is described and its use in a 1.8 Gbit s-1 optical fibre system reported.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. R. Beaumont, K. R. Preston, B. M. Macdonald, R. N. Shaw, R. A. Harmon, C. W. Ford, A. P. Thomas, R. P. Merrett, and R. C. Booth "LiNbO3 High Speed Travelling Wave Electro-Optic Waveguide Devices", Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); https://doi.org/10.1117/12.960076
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KEYWORDS
Electrodes

Aluminum

Modulators

Plasma etching

Gallium arsenide

Plasma

Modulation

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