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14 December 2016 On-wafer high temperature characterization system
L. Teodorescu, F. Drăghici, I. Rusu, G. Brezeanu
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Proceedings Volume 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII; 1001006 (2016) https://doi.org/10.1117/12.2247062
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2016, 2016, Constanta, Romania
Abstract
In this work a on-wafer high temperature characterization system for wide bandgap semiconductor devices and circuits has been designed, implemented and tested. The proposed system can perform the wafer temperature adjustment in a large domain, from the room temperature up to 3000C with a resolution better than ±0.50C. In order to obtain both low-noise measurements and low EMI, the heating element of the wafer chuck is supplied in two ways: one is from a DC linear power supply connected to the mains electricity, another one is from a second DC unit powered by batteries. An original temperature control algorithm, different from classical PID, is used to modify the power applied to the chuck.
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L. Teodorescu, F. Drăghici, I. Rusu, and G. Brezeanu "On-wafer high temperature characterization system", Proc. SPIE 10010, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII, 1001006 (14 December 2016); https://doi.org/10.1117/12.2247062
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KEYWORDS
Microcontrollers
Temperature metrology
Temperature metrology
Semiconducting wafers
Semiconducting wafers
Computer programming
Power supplies
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