This PDF file contains the front matter associated with SPIE Proceedings Volume 10017, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and Conference Committee listing.

The progress of 1.3- and 1.5-μm waveband wafer-fused VCSELs is reported. The emission of single mode power of 6 - 8 mW at room temperature and up to 3 mW at 80°C were demonstrated. 10-Gb/s full wavelength-set VCSEL devices for CWDM systems with high yield and Telcordia-reliability were industrially manufactured. By increasing the compressive strain in the QWs and reducing the cavity photon life time the modulation bandwidth was increased to 11.5 GHz, and large-signal data transmission experiments show error-free operation and open eye diagrams from 25 to 35 Gb/s in both B2B and after 10-km, respectively.

The polarization-resolved nonlinear dynamics of vertical-cavity surface-emitting lasers (VCSELs) subject to orthogonally polarized optical pulse injection are investigated numerically based on the spin flip model. By extensive numerical bifurcation analysis, the responses dynamics of photonic neuron based on VCSELs under the arrival of external stimuli of orthogonally polarized optical pulse injection are mainly discussed. It is found that, several neuron-like dynamics, such as phasic spiking of a single abrupt large amplitude pulse followed with or without subthreshold oscillation, and tonic spiking with multiple periodic pulses, are successfully reproduced in the numerical model of VCSELs. Besides, the effects of stimuli strength, pump current, frequency detuning, as well as the linewidth enhancement factor on the neuron-like response dynamics are examined carefully. The operating parameters ranges corresponding to different neuron-like dynamics are further identified. Thus, the numerical model and simulation results are very useful and interesting for the ultrafast brain-inspired neuromorphic photonics systems based on VCSELs.

High-quality photonic microwave generation is experimentally demonstrated based on the period-one (P1) dynamical state output from an optically injected 1550 nm vertical-cavity surface-emitting laser (1550 nm-VCSEL) subject to optoelectronic negative feedback. The experimental results show that, under suitable injection condition, the 1550 nm-VCSEL can generate a photonic microwave signal with single sideband optical spectrum structure, but the linewidth of the microwave signal is relatively wide (on the order of MHz). After further introducing optoelectronic negative feedback, the linewidth of the microwave signal can be narrowed two orders of magnitude to 105.7 kHz. Furthermore, for the case that the feedback strength is set at an optimized value, the frequency of the microwave signal can be tuned continuously within a certain range through simply adjusting the injection strength.

852nm Narrow linewidth lasers can be widely used in the field of ultra-fine spectrum measurement, Cs atomic clock control, satellite and optical fiber communication and so on. Furthermore, the stability of the single lateral mode is a very important condition to guarantee the narrow linewidth lasers. Here we investigate experimentally the influence of the narrow ridge structure and asymmetrical waveguide design on the stability single lateral mode of an 852nm diode laser. According to the waveguide theoretical analysis, ridge mesa etch depth (Δη , related to the refractive index difference of parallel to the junction) and ridge mesa width (the narrower the more control force to low order mode) are the main elements for lateral modes. In this paper, we designed different structures to investigate and verify major factors for lateral mode by experiment, and to confirm our thought. Finally, the 5μm mesa ridge laser, 800nm etch depth, with groove structure obtains excellent steady single lateral mode output by 150mA operating current and 30°C temperature. The optical spectrum FWHM is 0.5nm and side mode suppression ratio is 27dBm with uncoated. The laser with 1mm cavity length showed the threshold current of 50mA, a lasing wavelength of λ = 852.6nm, slope efficiency of above 0.7mW/mA. We accomplished single lateral mode of ridge waveguide edge-emitting lasers which can also be used as a laser source in the ultra-narrow linewidth external cavity laser system.

Highly uniform solid-phase Zn-diffusion technique was developed to fabricate transparent windows for 650 nm red laser diodes (LDs). The maximum output power was up to 120 mW, which is three times higher than that for LDs without window structure. The LDs showed excellent thermal characteristics and aging reliability with TO-can package. The characteristic temperature was estimated to be 85 K in the temperature range of 25~65 °C. The LDs showed stable operation of 10 mW at a high temperature of 75 °C. After aging test of 2000 h, the elevated operation current was less than 3%, compared to the initial value. The predicted life time was over 10000 h for 10 mW operation at 75 °C.

We report on our design and fabrication of 830 nm high power semiconductor lasers with extremely low beam divergence. Here we propose a novel approach in which by combining asymmetric waveguide and a feature called “pins” together, we were able to design an optimized epi structure which not only produces a beam divergence of less than 16°, but also has very good growth tolerance as well. Tested devices show the beam divergence is as small as 13°, yet they still retain very high slope efficiency of around 1.15 W/A and low threshold current of 400 mA for the devices with cavity length being 2 mm long, and ridge width being 40 μm wide.

In this letter, we propose and demonstrate a phase stabilization approach to distribute a radio frequency (RF) signal from remote antenna to local station based on passive post phase correction. Simplified antenna structure makes our scheme cost-effective and easy to implement. The key advantage of our method is that only one-stage frequency mixing is used, which indicates simpler operation and less conversion loss. A proof-of-concept experiment verifies that the phase drift is effectively compressed using the proposed scheme compared to the free-running situation.

Lasing mode control and direct modulation characteristics have been investigated for waveguide-coupled unidirectional-emission square microcavity lasers. A quasi-analytical model is introduced to analyze the mode field distributions and quality (Q) factors for the confined modes inside the square optical microcavities with directly coupled waveguide, where high-Q whispering-gallery-like (WG-like) modes are induced by the mode coupling between doubly-degenerate modes. AlGaInAs/InP waveguide-coupled unidirectional-emission square microcavity lasers are fabricated by using standard planar technology, and electrically-injected lasing is realized at room temperature. The lasing modes are controlled by properly designing the lasing cavity, output waveguide and injection pattern. Dual-transverse-mode lasing with a tunable wavelength interval from 0.25 to 0.39 nm is realized by using a spatially selective current injection to modulate the refractive index, as the mode field distributions of different transverse are spatially separated. The wavelength interval can be further increased to a few nanometers by reducing the cavity size and replacing the flat sidewalls with circular arcs. The field distributions of WG-like modes distribute uniformly in square microcavity, which avoid the burning-induced carrier diffusion in high-speed direct modulation. A small-signal modulation 3dB bandwidth exceeding 16 GHz, and an open eye diagram at 25 Gb/s are demonstrated for the high-speed direct modulated square microcavity laser.

An In_0.66Ga_0.34As_0.73P_0.27/In_0.89Ga_0.11As_0.23P_0.77 quantum-well laser structure was grown on an InP substrate. The whole structure was grown by metalorganic chemical vapor deposition. The material quality was characterized by double crystal X-ray diffraction and room-temperature photoluminescence spectra. It shows that the active region’s optical properties are comparable to that InGaAs/InGaAsP quantum-well lasers. Meanwhile, we fabricated an InP-based InGaAsP/InGaAsP multiple quantum wells (MQWs) laser at 1.3 μm wavelength. Under quasi-continuous wave condition, a threshold current of 400 mA and the single side slope efficiency of 0.18 mW/mA are achieved for a broad area device with 100 μm-wide strip and 500 μm-long cavity at room-temperature. The wavelength of emission spectrum is 1305 nm. When the injection current is 700 mA, FWHM of the envelope is 3.6 nm.

We report on our design and fabrication of very high power semiconductor lasers based on a core-aluminum-free (CAF) active structure. The optical power of as high as 45 W, limited by the thermal roll-over, has been obtained when the single emitter devices are tested under quasi-continuous wave (QCW) conditions, and more than 10 W has been acquired at the operation current of 10 A under continuous wave (CW) conditions. For 10 mm long bar chips, emitting power of up to 200 W is attainable for the operation current of 200 A. The lasers also exhibit excellent slope efficiency of about 1.3 W/A and beam divergence of only 25 °.

We demonstrate that two kinds of 2D nanomaterials are employed as saturable absorbers to realize infrared pulsed fiber lasers at 1.5 μm and 3 μm, respectively. Mode-locked optical pulses are achieved at 1.5 μm erbium-doped fiber lasers by using multilayer molybdenum disulfide (MoS₂). In addition, Q-switched fiber lasers are realized at 3 μm region by using topological insulator: Bi₂Te₃. Experimental proofs are provided. Our work reveals that 2D nanomaterials like MoS₂ and TI: Bi₂Te₃ are absolutely a class of promising and reliable saturable absorbers for optical pulse generation at infrared waveband.

In this paper, we demonstrate an all-normal dispersion (ANDi) femtosecond YDFL. The laser operates around 976 nm via single-clad single-mode core-pumped method, which could enhance the slope efficiency up to 19% compared to that of 14% via double-clad multi-mode pumped method. The pulse repetition rate is 44.3 MHz, and pulse energy is approximately 1 nJ. Through external cavity pulse compression by a pair of gratings, the pulse duration can be compressed to 250 fs, nearly transform-limited.

Based on a nonlinear fiber loop mirror (NOLM) composed of a fiber coupler (FC) and a highly nonlinear fiber (HNLF), a scheme is proposed to simultaneously realize the bandwidth enhancement and the time-delay signature (TDS) suppression of a chaotic signal generated from an external cavity optical feedback semiconductor laser. The simulation results show that, after passing through the NOLM, the bandwidth of chaotic signal can be efficiently enhanced and the TDS can be well suppressed under suitable operation parameters. Furthermore, the influences of the power-splitting ratio of the FC, the averaged power of the chaotic signal entering into the FC and the length of the HNLF on the chaotic bandwidth and TDS are analyzed, and the optimized parameters are determined.

A butterfly-packaged narrow-linewidth hybrid integrated external cavity diode laser module based on the polarization maintaining fiber Bragg grating is reported. The module emits at the wavelength of 1550 nm and provides 21 GHz of continuous tunability. It produces ≥ 20 mW of polarization maintaining fiber-coupled output power with intrinsic Lorentz linewidth ≤ 3 kHz and RIN ≤140 dB/√Hz@100 kHz. To qualify the reliability of the laser module under harsh environmental conditions, random vibration test and high-low temperature cycling test are carried out, and no degradation of the power current characteristic is observed.

We demonstrated a self-referenced electrical method for measuring frequency response of high-speed Mach-Zehnder modulators (MZMs) based on two-tone modulation. The modulation index and half-wave voltage can be extracted from the heterodyne ratio of two desired components by properly adjusting bias voltage. The method achieves the electrical domain measurement of the frequency-dependent modulation indices and frequency-dependent half-wave voltages of MZMs without any extra calibration for the responsivity fluctuation in the photodetection. Moreover, it reduces half bandwidth requirements of photodetector and electrical spectrum analyzer by carefully choosing a half frequency relationship of two-tone microwave signals. The consistency between our method and the optical spectrum analysis method verifies the simple but accurate measurement.

Based on generalized heat transfer model of thermoelectric cooler(TEC), the heat management model of semiconductor disk laser with TEC cooler has been built. With finite element method, this article has calculated the temperature distribution characteristics, and studied the effects of TEC current, heat exchange coefficient, the heatsink and the pump laser for the maximum temperature of quantum wells. Calculations show that the heat transfer coefficient significantly affects the ability of the TEC temperature shift, cooling system performance which is nearly inversely proportional to the heatsink thermal conductivity is not sensitive to its the thickness variation, and the performance of oxygen-free copper with optimization of the area is close to diamond. Meanwhile the maximum temperature of the quantum well has a linear relationship with the pump power, and increasing the pump spot size is an effective way to increase the optical power output

Based on the time delay self-heterodyne method to measure the laser linewidth, the short-term linewidth variation of a narrow linewidth laser is experimentally studied and analyzed, and then a time domain self-heterodyne method is proposed to measure the short-term frequency stability of narrow linewidth laser. The Rayleigh backscattering frequency of a pulsed light propagating in an optical fiber with length of 100km is used as the local oscillation frequency with relatively long time duration to measure the frequency variation of the narrow linewidth laser. By heterodyne between the laser frequency and the local oscillation frequency, the variation of the laser frequency is presented in the heterodyne radio frequency (IF). Then the time domain data of the heterodyne IF are extracted by an oscilloscope and through short time Fourier transform the frequency from the laser in different time segments is obtained. Experimental results demonstrate that for narrow linewidth laser its frequency in short-term is randomly fluctuating with a range less than triple of the laser linewidth. The measurement and evaluation of laser short-term frequency stability benefits the application of narrow linewidth lasers in distributed optical fiber sensing area.

Atmospheric turbulence has a great influence on the performance of the atmospheric laser communication system reducing the signal to noise ratio (SNR) and increasing the bit error rate (BER). However, there is rarely study on the effect of atmospheric turbulence on the power spectrum of the rectangular pulse. In this paper, a spectral analyzing method is used to analyze the influence of atmospheric turbulence on the signal. An experiment of laser beam propagation characteristic is carried out on a 6km horizontal atmospheric link, the wavelength is 808 nm. The signal is 100MHz rectangular pulse. The waveform of the rectangular pulse is collected by the oscilloscope, and the power spectral density of the signal is calculated and analyzed by the method of periodogram. Experimental results show that the response and noise characteristics of the laser and photoelectric detector have a great influence on the signal power spectrum distribution which can increase the noise component in the 10^6 Hz frequency range. After the atmospheric turbulence propagation, the signal power decreases in the whole frequency range. However, as the existence of atmospheric turbulence, the signal power increases in the atmospheric turbulence characteristic frequency (tens to hundreds of Hz). The noise power increases in the high frequency range (10^7~10^8 Hz).

Thermal properties of multiple layers including distributed Bragg reflector (DBR) and multiple quantum wells (MQWs) used in the semiconductor gain element are crucial for the performance of a semiconductor disk laser (SDL). For the purpose of more reasonable semiconductor wafer design, so to improve the thermal management of SDLs, accurate thermal conductivity value of a DBR is under considerable requirement. By the use of equilibrium molecular dynamics (EMD) method, thermal conductivities of AlAs/GaAs DBRs, which were widely employed in 1μm wavelength SDLs, were calculated, and simulated results were compared with reported data. Influences of the Al composition, and the layer thickness on the thermal conductivities were focused and analyzed.

The hardware-in-the-loop simulation system, which provides a precise, controllable and repeatable test conditions, is an important part of the development of the semi-active laser (SAL) guided weapons. In this paper, laser energy chain characteristics were studied, which provides a theoretical foundation for the SAL guidance technology and the hardware-in-the-loop simulation system. Firstly, a simplified equation was proposed to adjust the radar equation according to the principles of the hardware-in-the-loop simulation system. Secondly, a theoretical model and calculation method were given about the energy chain characteristics based on the hardware-in-the-loop simulation system. We then studied the reflection characteristics of target and the distance between the missile and target with major factors such as the weather factors. Finally, the accuracy of modeling was verified by experiment as the values measured experimentally generally follow the theoretical results from the model. And experimental results revealed that ratio of attenuation of the laser energy exhibited a non-linear change vs. pulse number, which were in accord with the actual condition.

In order to satisfy the requirements of the real-time and generality, a laser target simulator in semi-physical simulation system based on RTX+LabWindows/CVI platform is proposed in this paper. Compared with the upper-lower computers simulation platform architecture used in the most of the real-time system now, this system has better maintainability and portability. This system runs on the Windows platform, using Windows RTX real-time extension subsystem to ensure the real-time performance of the system combining with the reflective memory network to complete some real-time tasks such as calculating the simulation model, transmitting the simulation data, and keeping real-time communication. The real-time tasks of simulation system run under the RTSS process. At the same time, we use the LabWindows/CVI to compile a graphical interface, and complete some non-real-time tasks in the process of simulation such as man-machine interaction, display and storage of the simulation data, which run under the Win32 process. Through the design of RTX shared memory and task scheduling algorithm, the data interaction between the real-time tasks process of RTSS and non-real-time tasks process of Win32 is completed. The experimental results show that this system has the strongly real-time performance, highly stability, and highly simulation accuracy. At the same time, it also has the good performance of human-computer interaction.

In recent years, the all-optical signal processing system has become a hot research field of optical communication. This paper focused on the basic research of quantum-dot (QD) semiconductor optical amplifier (SOA) and studied its practical application to all-optical sampling. A multi-level dynamic physical model of QD-SOA is established, and its ultrafast dynamic characteristics are studied through theoretical and simulation research. For further study, an all-optical sampling scheme based on the nonlinear polarization rotation (NPR) effect of QD-SOA is also proposed. This paper analyzed the characteristics of optical switch window and investigated the influence of different control light pulses on switch performance. The presented optical sampling method has an important role in promoting the improvement of all-optical signal processing technology.

The semiconductor optical amplifier (SOA) plays an important role in the development of the all-optical signal processing because of the advantages of simple structure, easy integration and strong non-linearity. Especially the nonlinear polarization rotation effect of SOA is receiving considerable interest by many researchers nowadays. The all-optical flip-flop using the properties of SOA also obtains widespread attention by researchers, as all-optical flip-flop is an important part in the field of all-optical signal processing. In this paper, a new all-optical flip-flop structure using polarization switch (PSW) based on polarization rotation effect of SOA is presented.

The main work of the paper is the simulation of all-optical logic gates and optical SR latch. The logic gate setup only uses one SOA, but it can get two different logic gates through a simulation. The extinction ratio of the logic gate is about 30dB. The structure of optical SR latch utilizes the two coupled polarization rotation switch of SOA. The structure of the flip-flop is based on these two parts. To demonstrate the feasibility of the structure, we analyze two types of flip-flops, including all-optical D and T flip-flops, whose clock pulse repetition rate is 1GHz with the pulse width of 0.3ns. The quality of all-optical flip-flop in this paper is measured by the falling and rising edge time. In the simulation, the falling edge time is about 50ps, while the rising edge time is higher than the falling edge time, because the gain increases slowly to the recovery time after the decrease of the gain of SOA. The results are useful for the development of all-optical flip-flop based on SOA.

A new Monte Carlo simulation model of laser transmission in smokescreen is promoted in this paper. In the traditional Monte Carlo simulation model, the radius of particles is set at the same value and the initial cosine value of photons direction is fixed also, which can only get the approximate result. The new model is achieved based on MATLAB and can simulate laser transmittance in smokescreen with different sizes of particles, and the output result of the model is close to the real scenarios. In order to alleviate the influence of the laser divergence while traveling in the air, we changed the initial direction cosine of photons on the basis of the traditional Monte Carlo model. The mixed radius particle smoke simulation results agree with the measured transmittance under the same experimental conditions with 5.42% error rate.

As one of the most important applications of microwave photonic，ROF (Radio over Fiber) system，which combines the advantages of optical communication and wireless communication，is a good candidate for broadband mobile Communication In this paper, we built and simulation a 60GHz RoF(Radio-over-Fiber) transmission system based on PM modulator. First, we introduce the PM-IM(Phase modulation to intensity modulation) modulation mechanisms by the breaking the phase balanced approach. This method solves the problem that the constant envelope (phase modulation signal) generated by the phase modulator can not be directly detected by a photo detector. A standard single-mode fiber (SMF) is connected input to the F-P(Fabry-Perot) optical filter, which is to achieve the PM-IM modulation conversion by changing the wavelength of the laser or the frequency of the modulation factor of the F-P optical filter to adapt to different fiber lengths and the signal transmission rate. These two methods which changing the phase relationship between the optical carrier and the optical side band can realize the ideal phase transition to obtain efficient and low loss modulation conversion. Finally, the simulation results show that different fiber lengths and the signal transmission rate configuration of different wavelength of the laser or the frequency of the modulation factor of the F-P optical filter, the BER performance and the eye diagram of the 60GHz RoF transmission system signals have been improved based on these PM-IM modulation methods.

We report on our design and fabrication of 1470 nm high power InGaAlAs quantum well lasers. It is found that the 2-mm-long-cavity devices with aperture size of 96 μm can reach maximum power of around 4.2 W. The threshold is around 500 mA, and slope efficiency is about 0.42 W/A. Apart from the excellent external quantum efficiency and thermal performance, devices also show reduced beam divergence which is about 30°. Accelerated life-time test has also been performed to determine the reliability performance. Thus far more than 9000 life-test-hour has been accumulated, and there is no detectable sign of the power degradation, indicating our devices are extremely reliable.