Power degradation and reliability study of high-power laser bars at quasi-CW operation

Haoyu Zhang; Yong Fan; Hui Liu; Jingwei Wang; Chungen Zah; Xingsheng Liu

doi:10.1117/12.2256074

20 February 2017 Power degradation and reliability study of high-power laser bars at quasi-CW operation

Haoyu Zhang, Yong Fan, Hui Liu, Jingwei Wang, Chungen Zah, Xingsheng Liu

Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI; 101231E (2017) https://doi.org/10.1117/12.2256074
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

The solid state laser relies on the laser diode (LD) pumping array. Typically for high peak power quasi-CW (QCW) operation, both energy output per pulse and long term reliability are critical. With the improved bonding technique, specially Indium-free bonded diode laser bars, most of the device failures were caused by failure within laser diode itself (wearout failure), which are induced from dark line defect (DLD), bulk failure, point defect generation, facet mirror damage and etc. Measuring the reliability of LD under QCW condition will take a rather long time. Alternatively, an accelerating model could be a quicker way to estimate the LD life time under QCW operation. In this report, diode laser bars were mounted on micro channel cooler (MCC) and operated under QCW condition with different current densities and junction temperature (T_j ). The junction temperature is varied by modulating pulse width and repetition frequency. The major concern here is the power degradation due to the facet failure. Reliability models of QCW and its corresponding failures are studied. In conclusion, QCW accelerated life-time model is discussed, with a few variable parameters. The model is compared with CW model to find their relationship.

Conference Presentation

Citation Download Citation

Haoyu Zhang, Yong Fan, Hui Liu, Jingwei Wang, Chungen Zah, and Xingsheng Liu "Power degradation and reliability study of high-power laser bars at quasi-CW operation", Proc. SPIE 10123, Novel In-Plane Semiconductor Lasers XVI, 101231E (20 February 2017); https://doi.org/10.1117/12.2256074

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