PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Xuemei Chen, Allen Gabor, Pavan Samudrala, Sheldon Meyers, Erik Hosler, Richard Johnson, Nelson Felix, "Mix-and-match considerations for EUV insertion in N7 HVM," Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430F (24 March 2017); https://doi.org/10.1117/12.2258674