Simulation of InGaAs/InAlAs avalanche photodetectors

Zhengyu Zhang; Jun Chen; Min Zhu

doi:10.1117/12.2246821

1 November 2016 Simulation of InGaAs/InAlAs avalanche photodetectors

Zhengyu Zhang, Jun Chen, Min Zhu

Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101572A (2016) https://doi.org/10.1117/12.2246821
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China

Abstract

In this paper, we report 2D simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodetectors (SAGCM APDs), study the effect of multiplication layer parameters on the operating voltage ranges of APD. We found that with the change of the thickness and doping concentration of multiplication layer, the change of the punchthrough voltage, and the breakdown voltage can be obviously observed.

Citation Download Citation

Zhengyu Zhang, Jun Chen, and Min Zhu "Simulation of InGaAs/InAlAs avalanche photodetectors", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101572A (1 November 2016); https://doi.org/10.1117/12.2246821

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