Simulation of internal charge distribution and spatial charge characteristics of ferroelectrics irradiated by focused electron beam

Anna V. Pavelchuk; Anna G. Maslovskaya

doi:10.1117/12.2268165

14 December 2016 Simulation of internal charge distribution and spatial charge characteristics of ferroelectrics irradiated by focused electron beam

Anna V. Pavelchuk, Anna G. Maslovskaya

Author Affiliations +

Proceedings Volume 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics; 101760P (2016) https://doi.org/10.1117/12.2268165
Event: Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 2016, Khabarovsk, Russia

Abstract

This article reveals the problem of electron transport as well as charging effect analysis in ferroelectrics subjected to electron beam irradiation at diagnostics with scanning electron microscope (SEM) techniques. The parameters of the electron irradiation doze and source function were estimated by means of 3D-Monte-Carlo simulation of electron trajectories in the solid specimen. The computation data were demonstrated for typical ferroelectrics irradiated by intermediate-energy electron bunches (10-40 keV). The modification of reaction-diffusion model was also presented to evaluate the electron beam-induced charging dynamics in ferroelectrics. The simulation was based on the joint numerical solution of the continuity equation and Poisson equation taking into account the intrinsic radiation-induced diffusion processes. The findings from this study enable demonstrating charge distribution, dynamics of the potential distribution, electric field components and electron beam-induced component of polarization at assigned parameters relative to experimental condition of reversal process of domain structure in electron beam-irradiated ferroelectrics.

Citation Download Citation

Anna V. Pavelchuk and Anna G. Maslovskaya "Simulation of internal charge distribution and spatial charge characteristics of ferroelectrics irradiated by focused electron beam", Proc. SPIE 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 101760P (14 December 2016); https://doi.org/10.1117/12.2268165

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available