Axel Hoffmann,1 Christian Nenstiel,1 Markus Wagnerhttps://orcid.org/0000-0002-7367-5629,1 Felix Nippert,1 Gordon Callsen,1 Nadja Jankowski,1 Armin Dadgar,2 Stacia Keller3
1Technische Univ. Berlin (Germany) 2Otto-von-Guericke-Univ. Magdeburg (Germany) 3Univ. of California, Santa Barbara (United States)
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In this paper the properties of excitons and phonons in doped GaN is reviewed. We demonstrate that in heavy Ge doped GaN new quasi particle can be stabilized. Furthermore, we discuss and use the observation of local phonon modes to clarify the incorporation of germanium, silicon, carbon, and transition metal ions on different lattice places in the nitride material.
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Axel Hoffmann, Christian Nenstiel, Markus Wagner, Felix Nippert, Gordon Callsen, Nadja Jankowski, Armin Dadgar, Stacia Keller, "Optical properties of doped GaN (Conference Presentation)," Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320M (14 March 2018); https://doi.org/10.1117/12.2293824