Q. Wilmart,1,2 D. Fowler,1,2 C. Sciancalepore,1,2 K. Hassan,1,2 S. Plantier,1,2 L. Adelmini,1,2 S. Garcia,1,2 D. Robin-Brosse,1,2 S. Malhouitre,1,2 S. Olivier1,2
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We introduce our 200 mm Si-SiN photonics platform for high-speed and energy-efficient optical transceiver. We present the fabrication process as well as wafer level characterizations in the O-band of Si and SiN photonic components such as waveguides, grating fiber couplers and Si-SiN interlayer adiabatic transitions. We demonstrate a low thermo-optic coefficient of the SiN layer and a large optical bandwidth for the hybrid Si-SiN photonic devices. This enhanced Si-SiN platform is of great importance for the realization of CWDM transceivers for which low temperature sensitivity and large bandwidth are needed.
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Q. Wilmart, D. Fowler, C. Sciancalepore, K. Hassan, S. Plantier, L. Adelmini, S. Garcia, D. Robin-Brosse, S. Malhouitre, S. Olivier, "A hybrid SOI/SiN photonic platform for high-speed and temperature-insensitive CWDM optical transceivers," Proc. SPIE 10537, Silicon Photonics XIII, 1053709 (22 February 2018); https://doi.org/10.1117/12.2289633