Comparison for 1030nm DBR-tapered diode lasers with 10W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering

André Müller; Christof Zink; Jörg Fricke; Frank Bugge; Götz Erbert; Bernd Sumpf; Günther Tränkle

doi:10.1117/12.2290034

19 February 2018 Comparison for 1030nm DBR-tapered diode lasers with 10W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering

André Müller, Christof Zink, Jörg Fricke, Frank Bugge, Götz Erbert, Bernd Sumpf, Günther Tränkle

Author Affiliations +

Proceedings Volume 10553, Novel In-Plane Semiconductor Lasers XVII; 105531G (2018) https://doi.org/10.1117/12.2290034
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

1030 nm DBR tapered diode lasers with different lateral layouts are presented. The layout comparison includes lasers with straight waveguide and grating, tapered waveguide and straight grating, and straight waveguide and tapered grating. The lasers provide narrowband emission and optical output powers up to 15 W. The highest diffraction-limited central lobe output power of 10.5 W is obtained for lasers with tapered gratings only. Small variations in central lobe output power with RW injection current density also indicate the robustness of that layout. For lasers with tapered waveguides, high RW injection current densities up to 150 A/mm² have to be applied in order to obtain high central lobe output powers. Lasers with straight waveguide and grating operate best at low RW injection current densities, 50 A/mm²applied in this study. Using the layout optimizations discussed in this study may help to increase the application potential of DBR tapered diode lasers.

Citation Download Citation

André Müller, Christof Zink, Jörg Fricke, Frank Bugge, Götz Erbert, Bernd Sumpf, and Günther Tränkle "Comparison for 1030nm DBR-tapered diode lasers with 10W central lobe output power and different grating layouts for wavelength stabilization and lateral spatial mode filtering", Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105531G (19 February 2018); https://doi.org/10.1117/12.2290034

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE