Chemical trimming overcoat: an advanced composition and process for photoresist enhancement in lithography

Xisen Hou; Cong Liu; Kevin Rowell; Irvinder Kaur; Mingqi Li; Paul Baranowski; Jong Park; Cheng Bai Xu

doi:10.1117/12.2307674

13 March 2018 Chemical trimming overcoat: an advanced composition and process for photoresist enhancement in lithography

Xisen Hou, Cong Liu, Kevin Rowell, Irvinder Kaur, Mingqi Li, Paul Baranowski, Jong Park, Cheng Bai Xu

Author Affiliations +

Proceedings Volume 10586, Advances in Patterning Materials and Processes XXXV; 105861I (2018) https://doi.org/10.1117/12.2307674
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

In the semiconductor manufacturing industry, photoresist materials are used for transferring an image to one or more underlying layers. To increase the integration density of semiconductor devices and reduce cost of ownership, continuous development efforts towards advanced lithography processes, such as multiple patterning methods, have been devoted to reduce critical dimension. Multiple patterning processes, however, often encounter challenges to obtain an appreciable process window due to the poor aerial image contrast at the defocus region, not to mention the complexity in process and high cost. Herein, we report a novel CTOTM photoresist trimming solution as a post-lithography spin-on method to enhance photoresist performance in not only effectively reducing critical dimension, but also enabling larger process window, lower line width roughness, less scum and lower defectivity. This is a versatile process that is compatible with both acrylic and polyhydroxystyrene types of photoresists, therefore allowing it to become a general process for a wide range of applications across ArF, KrF and EUV lithography.

Citation Download Citation

Xisen Hou, Cong Liu, Kevin Rowell, Irvinder Kaur, Mingqi Li, Paul Baranowski, Jong Park, and Cheng Bai Xu "Chemical trimming overcoat: an advanced composition and process for photoresist enhancement in lithography", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105861I (13 March 2018); https://doi.org/10.1117/12.2307674

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KEYWORDS

Photoresist materials

Critical dimension metrology

Line width roughness

Lithography

Optical lithography

Photoresist developing

Coating

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