Piezoelectric wafer active sensors under gamma radiation exposure toward applications for structural health monitoring of nuclear dry cask storage systems

Mohammad Faisal Haider; Hanfei Mei; Bin Lin; Lingyu Yu; Victor Giurgiutiu; Poh-Sang Lam; Christopher Verst

doi:10.1117/12.2297390

27 March 2018 Piezoelectric wafer active sensors under gamma radiation exposure toward applications for structural health monitoring of nuclear dry cask storage systems

Mohammad Faisal Haider, Hanfei Mei, Bin Lin, Lingyu Yu, Victor Giurgiutiu, Poh-Sang Lam, Christopher Verst

Author Affiliations +

Proceedings Volume 10599, Nondestructive Characterization and Monitoring of Advanced Materials, Aerospace, Civil Infrastructure, and Transportation XII; 105992F (2018) https://doi.org/10.1117/12.2297390
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2018, Denver, Colorado, United States

Abstract

Structural health monitoring (SHM) is in urgent need and must be integrated into the nuclear-spent fuel storage systems to guarantee the safe operation. The dry cask storage system (DCSS) is such storage facility, which is licensed for temporary storage for nuclear-spent fuel at the independent spent fuel storage installations (ISFSIs) for certain predetermined period of time. Gamma radiation is one of the major radiation sources near DCSS. Therefore, a detailed experimental investigation was completed on the gamma radiation endurance of piezoelectric wafer active sensors (PWAS) transducers for SHM applications to the DCSS system. The irradiation test was done in a Co-60 gamma irradiator. Lead Zirconate Titanate (PZT) and Gallium Orthophosphate (GaPO4) PWAS transducers were exposed to 40.7 kGy gamma radiation. Total radiation dose was achieved in two different radiation dose rates: (a) slower radiation rate at 0.1 kGy/hr for 20 hours (b) accelerated radiation rate at 1.233 kGy/hr for 32 hours. The total cumulative radiation dose of 40.7 kGy is equivalent to 45 years of operation in DCSS system. Electro-mechanical impedance and admittance (EMIA) signatures and electrical capacitance were measured to evaluate the PWAS performance after each gamma radiation exposure. The change in resonance frequency of PZT-PWAS transducer for both in-plane and thickness mode was observed. The GaPO4-PWAS EMIA spectra do not show a significant shift in resonance frequency after gamma irradiation exposure. Radiation endurance of new high-temperature HPZ-HiT PWAS transducer was also evaluated. The HPZ-HiT transducers were exposed to gamma radiation at 1.233 kGy/hr for 160 hours with 80 hours interval. Therefore, the total accumulated gamma radiation dose is 184 kGy. No significant change in impedance spectra was observed due to gamma radiation exposure.

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Mohammad Faisal Haider, Hanfei Mei, Bin Lin, Lingyu Yu, Victor Giurgiutiu, Poh-Sang Lam, and Christopher Verst "Piezoelectric wafer active sensors under gamma radiation exposure toward applications for structural health monitoring of nuclear dry cask storage systems ", Proc. SPIE 10599, Nondestructive Characterization and Monitoring of Advanced Materials, Aerospace, Civil Infrastructure, and Transportation XII, 105992F (27 March 2018); https://doi.org/10.1117/12.2297390

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KEYWORDS

Transducers

Gamma radiation

Ferroelectric materials

Structural health monitoring

Capacitance

Semiconducting wafers

Active sensors

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