Design, fabrication and characterization of SiOx/SiON/SiO2/Si structures for passive optical waveguides realization

J. Chovan; D. Figura; J. Chlpík; D. Lorenc; V. Řeháček; F. Uherek

doi:10.1117/12.2295305

1 December 2017 Design, fabrication and characterization of SiOx/SiON/SiO2/Si structures for passive optical waveguides realization

J. Chovan, D. Figura, J. Chlpík, D. Lorenc, V. Řeháček, F. Uherek

Author Affiliations +

Proceedings Volume 10603, Photonics, Devices, and Systems VII; 106030N (2017) https://doi.org/10.1117/12.2295305
Event: Photonics Prague 2017, 2017, Prague, Czech Republic

Abstract

SiON is a suitable material for the implementation of photonic integrated circuits with a middle refractive index contrast for the visible and near infrared region. The paper presents the design, fabrication and characterization of SiON/SiO2/Si structures for passive optical waveguides realization with designed refractive index contrast 0.13. This refractive index contrast allows fabrication of strip SiOx/SiON/SiO2/Si waveguides with waveguide band losses bellow 0.01dB/cm at 150um waveguide radius. SiON and SiOx layers were fabricated by plasma-enhanced chemical vapor deposition techniques. The plasma-enhanced chemical vapor deposition technological parameters were tuned and optimized for designed refractive index contrast 0.13 and designed waveguide thickness 2.5 m. The refractive index of fabricated SiON layers were measured by optical ellipsometry.

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J. Chovan, D. Figura, J. Chlpík, D. Lorenc, V. Řeháček, and F. Uherek "Design, fabrication and characterization of SiOx/SiON/SiO2/Si structures for passive optical waveguides realization", Proc. SPIE 10603, Photonics, Devices, and Systems VII, 106030N (1 December 2017); https://doi.org/10.1117/12.2295305

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