Gate-tunable large magnetoresistance in semiconductor-based spin valve devices (Conference Presentation)

Mariusz Ciorga; Martin Oltscher; Franz Eberle; Thomas Kuczmik; Andreas Bayer; Dieter Schuh; Dominique Bougeard; Dieter Weiss

doi:10.1117/12.2319375

18 September 2018 Gate-tunable large magnetoresistance in semiconductor-based spin valve devices (Conference Presentation)

Mariusz Ciorga, Martin Oltscher, Franz Eberle, Thomas Kuczmik, Andreas Bayer, Dieter Schuh, Dominique Bougeard, Dieter Weiss

Author Affiliations +

Proceedings Volume 10732, Spintronics XI; 107320J (2018) https://doi.org/10.1117/12.2319375
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States

Abstract

A spin-dependent and electric-field tunable magnetoresistance (MR) of a semiconducting (SC) channel placed between two ferromagnetic (FM) contacts is a key ingredient in many novel spin-based device concepts. Whereas successful realization of such devices requires a large magnetoresistance signal, the signals measured in semiconductor-based devices are usually very low, well below 1\%, because of highly resistive tunnel FM/SC interfaces. In this talk, we will discuss how the finite electric fields effects in lateral FM/SC/FM devices lead to enhancement of the measured magnetoresistance by increasing the efficiency of the spin transport in the channel and boosting spin-to-charge conversion at the FM/SC interface. We will illustrate this discussion with the results of our recent experiments on lateral all-semiconductor spin valve devices with a transport channel formed in the two-dimensional electron system embedded in GaAs/(Al,Ga)As interface and with ferromagnetic (Ga,Mn)As/GaAs Esaki diodes as source and drain contacts [1]. We have measured very large two-terminal spin valve signals, in order of 1 kOhm in such devices, with MR reaching even up to 80\% in the nonlinear regime of the current-voltage characteristic [2]. We will also demonstrate that the MR signal can be additionally tuned by means of an electric gate, with the gating scheme based on switching between uni- and bidirectional spin diffusion, without resorting to spin–orbit coupling. The work has been supported by Deutsche Forschungsgemeinschaft (DFG) through SFB689. [1] M. Oltscher et al., Phys. Rev. Lett. 113, 236602 (2014) [2] M. Oltscher et al., Nature Commun. 8, 1807 (2017)

Conference Presentation

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Mariusz Ciorga, Martin Oltscher, Franz Eberle, Thomas Kuczmik, Andreas Bayer, Dieter Schuh, Dominique Bougeard, and Dieter Weiss "Gate-tunable large magnetoresistance in semiconductor-based spin valve devices (Conference Presentation)", Proc. SPIE 10732, Spintronics XI, 107320J (18 September 2018); https://doi.org/10.1117/12.2319375

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KEYWORDS

Magnetic semiconductors

Semiconductors

Ferromagnetics

Measurement devices

Diodes

Electron transport

Embedded systems

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