Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector [1]. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately 235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. In this talk, we will present the main issues of the spin-injection problem at ferromagnet/Tunnel barrier/MoS2 interfaces as well as the spin-propagation in multilayered channel like played by MoS2 involving Schottky depletion layers giving thus an extension to earlier modeling of spin-injection in ferromagnet/ssource/ferromagnet systems [2-3].
[1] Shiheng Liang et al., Nat. Comm. 8, 14947 (2017)
[2] A. Fert, H. Jaffrès, Phys Rev B64, 184420, 2001
[3] A. Fert, J.-M. George, H. Jaffrès, R. Mattana, IEEE, 54, 921-932 (2007)
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