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In this paper results of AC measurements of phase angle θ, capacity Cp and loss tangent tgδ dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity σ and relative permittivity εr were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.
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Karolina Czarnacka, Tomasz N. Koltunowicz, Aleksander K. Fedotov, "AC dielectric properties of SiO2 thin layers implanted with In and Sb ions," Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108085K (1 October 2018); https://doi.org/10.1117/12.2501667