Applying MPC for EUV mask fabrication

Dai Tsunoda; Yohei Torigoe; Yutaro Sato; Masakazu Hamaji; Gek-Soon Chua; Christian Bürgel

doi:10.1117/12.2502068

3 October 2018 Applying MPC for EUV mask fabrication

Dai Tsunoda, Yohei Torigoe, Yutaro Sato, Masakazu Hamaji, Gek-Soon Chua, Christian Bürgel

Proceedings Volume 10810, Photomask Technology 2018; 108101H (2018) https://doi.org/10.1117/12.2502068
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

EUV lithography draws increasing attention and its expectation is rising. For instance, replacing a triple patterning with ArF immersion lithography to EUV single patterning may reduce 50% of cost and 25% of cycle time [1]. At the same time, the importance of MPC (Mask Process Correction) is also growing [2] [3] [4]. It has become no longer possible to handle recent small and complex features using a rule-based bias approach. It is known that EUV lithography masks have a different structural stack so that “short range effect” of EB proximity effect is observed in mask writing [5]. In this paper, we investigated the above short range effect through MPC model calibration. Mask data preparation step of EUV mask case is performed and the Turn-a-around (TAT) is compared with conventional DUV mask case.

Citation Download Citation

Dai Tsunoda, Yohei Torigoe, Yutaro Sato, Masakazu Hamaji, Gek-Soon Chua, and Christian Bürgel "Applying MPC for EUV mask fabrication", Proc. SPIE 10810, Photomask Technology 2018, 108101H (3 October 2018); https://doi.org/10.1117/12.2502068

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KEYWORDS

Photomasks

Extreme ultraviolet

Etching

Calibration

Extreme ultraviolet lithography

Critical dimension metrology

Mask making

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