Highly photosensitive vertical photodetectors based on CsPbBr3 and PbS quantum dot layered heterojunction

Yu Yu; Yating Zhang D.D.S.; Lufan Jin; Zhiliang Chen; Yifan Li; Qingyan Li; Mingxuan Cao; Yongli Che; Jianquan Yao

doi:10.1117/12.2326283

5 November 2018 Highly photosensitive vertical photodetectors based on CsPbBr₃ and PbS quantum-dot-layered heterojunction

Yu Yu, Yating Zhang D.D.S., Lufan Jin, Zhiliang Chen, Yifan Li, Qingyan Li, Mingxuan Cao, Yongli Che, Jianquan Yao

Author Affiliations +

Proceedings Volume 10814, Optoelectronic Devices and Integration VII; 1081411 (2018) https://doi.org/10.1117/12.2326283
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new-style device structures and composite material systems are needed with low-cost fabrication and high performance. Vertical field effect photodetectors are fabricated with Au/Ag nanowires as the transparent source electrode and with vertically stacked layers of CsPbBr₃ and lead sulfide quantum dots, which formed heterojunctions. The built-in electric field in the layered heterojunction aids the separation of photoinduced excitons, while the short channel enables efficient carrier transport across the active region. Both of these benefits enable a high photo performance and fast photoresponse. This vertical phototransistors exhibit a wide response spectrum from 400 to 2100 nm, a high photoresponsivity of more than 9 × 10⁸ AW⁻¹, and a high detectivity of up to 2 × 10¹⁷ Jones (cm Hz^1/2 W⁻¹) under infrared illumination. Additionally, this vertical phototransistor had a response time of 3 μs. The solution –based fabrication process and excellent device performances strongly underscore vertical architecture combined with the layered heterojunction as a promising approach for future photodetection field.

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Yu Yu, Yating Zhang D.D.S., Lufan Jin, Zhiliang Chen, Yifan Li, Qingyan Li, Mingxuan Cao, Yongli Che, and Jianquan Yao "Highly photosensitive vertical photodetectors based on CsPbBr₃ and PbS quantum-dot-layered heterojunction", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 1081411 (5 November 2018); https://doi.org/10.1117/12.2326283

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