High-efficiency Ge-on-Si SPADs for short-wave infrared

Derek C. S. Dumas; Jarosław Kirdoda; Ross W. Millar; Peter Vines; Kateryna Kuzmenko; Gerald S. Buller; Douglas J. Paul

doi:10.1117/12.2521067

27 February 2019 High-efficiency Ge-on-Si SPADs for short-wave infrared

Derek C. S. Dumas, Jarosław Kirdoda, Ross W. Millar, Peter Vines, Kateryna Kuzmenko, Gerald S. Buller, Douglas J. Paul

Proceedings Volume 10914, Optical Components and Materials XVI; 1091424 (2019) https://doi.org/10.1117/12.2521067
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm - 1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10^-16 WHz^-1/2, and single-photon detection efficiencies of 18% for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K.

Citation Download Citation

Derek C. S. Dumas, Jarosław Kirdoda, Ross W. Millar, Peter Vines, Kateryna Kuzmenko, Gerald S. Buller, and Douglas J. Paul "High-efficiency Ge-on-Si SPADs for short-wave infrared", Proc. SPIE 10914, Optical Components and Materials XVI, 1091424 (27 February 2019); https://doi.org/10.1117/12.2521067

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