Exciting and confining light in Cr doped gallium oxide

M. Alonso-Orts; E. Nogales; José M. San Juan; María L. Nó; Bianchi Méndez

doi:10.1117/12.2509672

1 March 2019 Exciting and confining light in Cr doped gallium oxide

M. Alonso-Orts, E. Nogales, José M. San Juan, María L. Nó, Bianchi Méndez

Proceedings Volume 10919, Oxide-based Materials and Devices X; 109191S (2019) https://doi.org/10.1117/12.2509672
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

On one hand, interest on the tunability of the optical microcavities has increased in the last few years due to the need for selective nano- and microscale light sources to be used as photonic building blocks in several applications. On the other, transparent conductive oxide (TCO) β-Ga₂O₃ is attracting attention in the optoelectronics area due to its ultra wide band gap and high breakdown field. However, at the micro- and nanoscale there are still some challenges to face up, namely the control and tuning of the optical and electrical properties of this oxide. In this work, Cr doped Ga₂O₃ elongated microwires are grown using the vapor-solid (VS) mechanism. Focused Ion Beam (FIB) etching forms Distributed Bragg Reflector (DBR)-based resonant microcavities. Room temperature microphotoluminescence (μ-PL) spectra show strong modulations in the red-NIR range on five cavities with different lengths. Selectivity of the peak wavelengths is obtained, proving the tunability of this kind of optical systems. The confined modes are analyzed experimentally, analytically and via finite difference time domain (FDTD) simulations. Experimental reflectivities up to 78% are observed.

Conference Presentation

Citation Download Citation

M. Alonso-Orts, E. Nogales, José M. San Juan, María L. Nó, and Bianchi Méndez "Exciting and confining light in Cr doped gallium oxide", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109191S (1 March 2019); https://doi.org/10.1117/12.2509672

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