Enhancement of photocurrent and responsivity of Zn1-xMgxO (x=15%)-based ultraviolet detector by UV-ozone treatment

Md Jawaid Alam; Punam Murkute; Hemant Ghadi; Sushama Sushama; Shyam Murli Manohar Dhar Dwivedi; Anupam Ghosh; Chiranjib Ghosh; Aniruddha Mondal; Subhananda Chakrabarti

doi:10.1117/12.2509509

1 March 2019 Enhancement of photocurrent and responsivity of Zn_1-xMg_xO (x=15%)-based ultraviolet detector by UV-ozone treatment

Md Jawaid Alam, Punam Murkute, Hemant Ghadi, Sushama Sushama, Shyam Murli Manohar Dhar Dwivedi, Anupam Ghosh, Chiranjib Ghosh, Aniruddha Mondal, Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 10919, Oxide-based Materials and Devices X; 109192L (2019) https://doi.org/10.1117/12.2509509
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

UV photodetector have been successfully implemented in various applications like ozone sensing, communication, astronomy and flame detection etc. Zn(Mg)O is a wide band gap material with high excitonic binding energy at room temperature thus making it a promising material in optoelectronic industries. In the present work, we are achieving increased photocurrent and high responsivity in UV-A regime with post growth UV-ozone treatment from photodetector fabricated using RF sputtered ZnMgO thin film. The thin film was deposited on semi-insulating silicon wafer at 400C for 20 min followed by 70 min UV-Ozone treatment. The final step was to fabricate an interdigitated electrode on the processed samples. More than two times enhancement of photocurrent was observed after UVO treatment. Noteworthy responsivity values of 22 A/W and 67 A/W were measured from as-deposited and UVO annealed photodetector, respectively at 380 nm with an applied bias of -5 V bias. However, the measured detectivity values for as grown and UV-O annealed sample was 1.3 × 10¹³ and 2.7 × 10¹³, respectively. Noise equivalent power in as-deposited sample and UVO treated sample was estimated to be 2.4 × 10^-12 W/√Hz and 1.1 × 10^-12 W/√Hz respectively. Photo detector fabricated with UV-O annealing exhibited good switching behaviors with 37 ms and 30 ms rise and fall time, respectively.

Citation Download Citation

Md Jawaid Alam, Punam Murkute, Hemant Ghadi, Sushama Sushama, Shyam Murli Manohar Dhar Dwivedi, Anupam Ghosh, Chiranjib Ghosh, Aniruddha Mondal, and Subhananda Chakrabarti "Enhancement of photocurrent and responsivity of Zn_1-xMg_xO (x=15%)-based ultraviolet detector by UV-ozone treatment", Proc. SPIE 10919, Oxide-based Materials and Devices X, 109192L (1 March 2019); https://doi.org/10.1117/12.2509509

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photodetectors

Sensors

Ultraviolet radiation

Silicon

Thin films

Oxygen

Switching

Show All Keywords

Keywords/Phrases

Search In:

Publication Years