Depth measurement technique for extremely deep holes using back-scattered electron images with high voltage CD-SEM

Takahiro Nishihata; Mayuka Osaki; Maki Tanaka; Takuma Yamamoto; Akira Hamaguchi; Chihiro Ida; Yusaku Suzuki

doi:10.1117/12.2514799

26 March 2019 Depth measurement technique for extremely deep holes using back-scattered electron images with high voltage CD-SEM

Takahiro Nishihata, Mayuka Osaki, Maki Tanaka, Takuma Yamamoto, Akira Hamaguchi, Chihiro Ida, Yusaku Suzuki

Author Affiliations +

Proceedings Volume 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII; 109591B (2019) https://doi.org/10.1117/12.2514799
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

A depth measurement technique for extremely deep holes (such as channel holes in 3D flash memory devices)—by using back-scattered-electron (BSE) images obtained by a high voltage critical dimension scanning electron microscope (CDSEM)— was developed. A high voltage CD-SEM can detect BSEs that penetrate solids surrounding deep holes. These BSE images include rich information concerning the bottom structures of deep holes. As the BSEs lose their energies according to the distance they travel in solids, it is deduced that the BSE image intensity at hole bottoms depends on hole depth. In a feasibility study on depth measurement using an SEM simulator, it was found that the intensity also depends on hole diameter. The relationship between BSE intensity, hole depth, and hole diameter was modeled by simplifying a backscattering model and approximating the target medium by volume density. Based on this model, a depth measurement technique using only a top-view BSE image is proposed. Measurement error of the technique for channel holes of a 3D flash memory device with depths of a few microns was evaluated by using a high voltage CD-SEM. According to the results of the evaluation, error range was 62 nm and measurement repeatability was ± 18 nm. It is concluded that these values are sufficient for detecting depth defects. This technique achieves fast and non-destructive depth measurement of individual extremely deep holes.

Citation Download Citation

Takahiro Nishihata, Mayuka Osaki, Maki Tanaka, Takuma Yamamoto, Akira Hamaguchi, Chihiro Ida, and Yusaku Suzuki "Depth measurement technique for extremely deep holes using back-scattered electron images with high voltage CD-SEM", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109591B (26 March 2019); https://doi.org/10.1117/12.2514799

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