Silver-based double metal waveguide for terahertz quantum cascade laser

R. Khabibullin; D. Ushakov; A. Afonenko; N. Shchavruk; D. Ponomarev; O. Volkov; V. Pavlovskiy; I. Vasil’evskii; D. Safonov; A. Dubinov

doi:10.1117/12.2521774

15 March 2019 Silver-based double metal waveguide for terahertz quantum cascade laser

R. Khabibullin, D. Ushakov, A. Afonenko, N. Shchavruk, D. Ponomarev, O. Volkov, V. Pavlovskiy, I. Vasil’evskii, D. Safonov, A. Dubinov

Author Affiliations +

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102204 (2019) https://doi.org/10.1117/12.2521774
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

We have designed and fabricated terahertz quantum cascade lasers (THz QCLs) with double metal waveguide (DMW) based on three and four-quantum well GaAs/Al_0.15Ga_0.85As active module with resonant-phonon depopulation scheme. Three-well and four-well THz QCLs have a lasing frequencies of 3.2 THz and 2.3 THz, respectively. We investigate the dependence of threshold current and lasing output power on temperature for fabricated THz QCL. We propose to use DMW based on silver (Ag) for reducing the losses of the waveguide. The spectra of the loss coefficient of the DMW based on Au and Ag are calculated. It is shown, that the use of Ag-based DMW allows to reduce losses by 2-4 cm^–1 in comparison with Au-based DMW. Taking into account the absorption of THz radiation by free carriers and optical phonons, the spectrum of total mode losses has a wide minimum in the region of 3-6 THz, which shifts to the highfrequency region of the spectrum with increasing temperature. The postgrowth processing for THz QCL with Ag-Ag DMW are studied.

Citation Download Citation

R. Khabibullin, D. Ushakov, A. Afonenko, N. Shchavruk, D. Ponomarev, O. Volkov, V. Pavlovskiy, I. Vasil’evskii, D. Safonov, and A. Dubinov "Silver-based double metal waveguide for terahertz quantum cascade laser", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102204 (15 March 2019); https://doi.org/10.1117/12.2521774

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