Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO2 multilayer heterostructures

G. N. Kamaev; S. G. Cherkova; A. A. Gismatulin; V. A. Volodin; V. A. Skuratov

doi:10.1117/12.2522161

15 March 2019 Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO₂ multilayer heterostructures

G. N. Kamaev, S. G. Cherkova, A. A. Gismatulin, V. A. Volodin, V. A. Skuratov

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102213 (2019) https://doi.org/10.1117/12.2522161
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

In the present study, we experimentally examined the effect of swift Хе ion irradiation of multilayer structures involving ultrathin alternating layers of SiO₂ and amorphous hydrogenated silicon (α-Si:H), and subsequent isochronal anneals of such structures, on their properties. It is shown that the action of swift heavy ions on Si/SiO₂ multilayer structures leads to the formation of Si nanoclusters. In the latter case, the multi-layer structure of the samples was retained, and the ordering of nanoclusters along ion tracks was observed. The irradiation produces nuclei which, during subsequent anneals, facilitate the formation of Si nanocrystals (Si NCs) in the dielectric layer. In the multi-layer metal-oxide-semiconductor (MOS) structures with Si NCs embedded in the dielectric matrix, a phenomenon of bipolar resistive switching was observed. On increasing the number of NC layers, during the on-off process intermediate metastable states were manifested. This observation may prove important for realization of intermediate resistance values (multi-bit data storage) and for the development of additive neuromorphic systems.

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G. N. Kamaev, S. G. Cherkova, A. A. Gismatulin, V. A. Volodin, and V. A. Skuratov "Swift heavy ion stimulated formation of the Si quantum dots in Si/SiO₂ multilayer heterostructures", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102213 (15 March 2019); https://doi.org/10.1117/12.2522161

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