(Hg,Zn)Te Among The Other Materials For IR Detection

R. Triboulet; M. Bourdillot; A. Durand; T. Duy Nguyen

doi:10.1117/12.960627

12 September 1989 (Hg,Zn)Te Among The Other Materials For IR Detection

R. Triboulet, M. Bourdillot, A. Durand, T. Duy Nguyen

Proceedings Volume 1106, Future Infrared Detector Materials; (1989) https://doi.org/10.1117/12.960627
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

The advantages predicted for (Hg,Zn)Te over (Hg,Cd)Te are stressed. The(Hg,Zn)Te alloys are then situated, according to their properties in IR detection at 10.6 μm, among the other II-VI ternary alloys and some low dimensional III-V's. The different techniques used so far for MZT bulk and epitaxial growth are reviewed. The problem of substrates for the growth of MZT by liquid phase epitaxy is discussed. Finally recent results on MZT device performances, and mainly on the reliability of photodiodes, confirm the advantages predicted for MZT over MCT.

Citation Download Citation

R. Triboulet, M. Bourdillot, A. Durand, and T. Duy Nguyen "(Hg,Zn)Te Among The Other Materials For IR Detection", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960627

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