Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)

Christopher N. Anderson

doi:10.1117/12.2538717

16 October 2019 Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)

Christopher N. Anderson

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 1114712 (2019) https://doi.org/10.1117/12.2538717
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

To meet industry demand for EUV materials testing capabilities down to the 2 nm lithography node, the EUV Photoresist Testing Center at Berkeley Lab has been expanded to include a 8-nm resolution, 0.5-NA EUV microfield exposure system with robotic sample processing tailed for research. This paper provides an overview of the capabilities and performance of the 0.5-NA EUV exposure system and discusses printing results since user commissioning shifts began in Q2 2019.

Conference Presentation

Citation Download Citation

Christopher N. Anderson "Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114712 (16 October 2019); https://doi.org/10.1117/12.2538717

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE