High power and high efficiency 1060nm semiconductor laser mini-bar with multi-active regions

Menghuan Wang; Jianjun Li; Yonggang Zou; Zexu Yuan; Jie Fan; Hongkang Cao; Zhenyu Wen; Xiaohui Ma

doi:10.1117/12.2533995

17 May 2019 High power and high efficiency 1060nm semiconductor laser mini-bar with multi-active regions

Menghuan Wang, Jianjun Li, Yonggang Zou, Zexu Yuan, Jie Fan, Hongkang Cao, Zhenyu Wen, Xiaohui Ma

Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111703P (2019) https://doi.org/10.1117/12.2533995
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

Aiming at the urgent demand of small volume, high efficiency and high power laser source in the field of laser ranging, we proposed a multi-active-regions mini-bar (MAMB) structure of semiconductor laser diodes, in which multi-active regions (or sub-LDs) are cascaded by reverse-biased tunnel junctions (TJs) transversely, meanwhile, several sub-cells composed of sub-LDs form mini-bar laterally. The entire structure was epitaxially grown on GaAs substrate by MOCVD. In order to minimize the additional series resistance introduced by the tunnel junction, InGaAs double quantum wells (DQWs) TJ is adopted. To increase the COMD level, each sub-LD uses an AlGaAs asymmetric large optical cavity, in which the active region is a compressive strained InGaAs DQWs. After the standard chip post-process, the MAMB was fabricated with the ridge-shaped sub-cells, which has a strip width of 200μm and cavity length of 1mm. The MAMB was then soldered on C-mount and mounted on TO3 to test at room temperature with a frequency of 20 Hz and a pulse width of 20 μs. The output power of a MAMB with 3 active regions and 3 sub-cells reaches 47.76 W (28 A), corresponding to a slope efficiency of 2.02 W/A, and the peak wavelength is 1060.6 nm. The results show that the MAMB structure could effectively improve the output power and reduce its volume.

Citation Download Citation

Menghuan Wang, Jianjun Li, Yonggang Zou, Zexu Yuan, Jie Fan, Hongkang Cao, Zhenyu Wen, and Xiaohui Ma "High power and high efficiency 1060nm semiconductor laser mini-bar with multi-active regions", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111703P (17 May 2019); https://doi.org/10.1117/12.2533995

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconductor lasers

Gallium arsenide

High power lasers

Quantum wells

Waveguides

Electrodes

Indium gallium arsenide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years