Presentation
26 November 2019 Few cycle pulse laser induced damage studies of gallium oxide and gallium nitride (Conference Presentation)
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Proceedings Volume 11173, Laser-induced Damage in Optical Materials 2019; 111730F (2019) https://doi.org/10.1117/12.2538819
Event: SPIE Laser Damage, 2019, Broomfield (Boulder area), Colorado, United States
Abstract
The laser damage thresholds for gallium nitride and gallium oxide were found after exposing each sample to a femtosecond laser pulse. Threshold fluences were determined for both single pulse and multi pulse exposures. To accurately characterize the excited carrier density criteria in which visible laser damage occurs, we simulated carrier excitation dynamics for the entire laser pulse as it interacts with the target using the Keldysh model. From this a dynamic model of the conduction band carrier concentration was determined. For the measured single shot threshold fluences, the plasma critical density criteria for damage was met.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brandon Harris "Few cycle pulse laser induced damage studies of gallium oxide and gallium nitride (Conference Presentation)", Proc. SPIE 11173, Laser-induced Damage in Optical Materials 2019, 111730F (26 November 2019); https://doi.org/10.1117/12.2538819
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Cited by 1 scholarly publication.
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KEYWORDS
Gallium nitride

Oxides

Gallium

Laser induced damage

Ionization

Plasma

Solid modeling

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